This introductory text develops the reader’s fundamental understanding of core principles and experimental aspects underlying the operation of nanoelectronic devices. The author makes a thorough and systematic presentation of electron transport in quantum-confined systems such as quantum dots quantum wires and quantum wells together with Landauer-Büttiker formalism and non-equilibrium Green’s function approach. The coverage encompasses nanofabrication techniques and characterization tools followed by a comprehensive exposition of nanoelectronic devices including resonant tunneling diodes nanoscale MOSFETs carbon nanotube FETs high-electron-mobility transistors single-electron transistors and heterostructure optoelectronic devices. The writing throughout is simple and straightforward with clearly drawn illustrations and extensive self-study exercises for each chapter. Introduces the basic concepts underlying the operation of nanoelectronic devices. Offers a broad overview of the field including state-of-the-art developments. Covers the relevant quantum and solid-state physics and nanoelectronic device principles. Written in lucid language with accessible mathematical treatment. Includes extensive end-of-chapter exercises and many insightful diagrams. | Introductory Nanoelectronics Physical Theory and Device Analysis